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60P06,60P06場(chǎng)效應(yīng)管,MOS管60P06參數(shù),60P06封裝DFN5*660P06場(chǎng)效應(yīng)管,-60A -60V,60P06參數(shù)資料,60P06引腳圖,60P06封裝為DFN5*6,60P06中文資
225N04,225N04場(chǎng)效應(yīng)管,MOS管225N04參數(shù),225N04封裝DFN5*6225N04場(chǎng)效應(yīng)管,225A 40V,225N04參數(shù)資料,225N04引腳圖,225N04封裝為DFN5*6,225N
130N10,130N10場(chǎng)效應(yīng)管,MOS管130N10參數(shù),130N10封裝DFN5*6130N10場(chǎng)效應(yīng)管,130A 100V,130N10參數(shù)資料,130N10引腳圖,130N10封裝為DFN5*6,130
100N10,100N10場(chǎng)效應(yīng)管,MOS管100N10參數(shù),100N10封裝DFN5*6100N10場(chǎng)效應(yīng)管,100A 100V,100N10參數(shù)資料,100N10引腳圖,100N10封裝為DFN5*6,100
50N10,50N10場(chǎng)效應(yīng)管,MOS管50N10參數(shù),50N10封裝DFN5*650N10場(chǎng)效應(yīng)管,50A 100V,50N10參數(shù)資料,50N10引腳圖,50N10封裝為DFN5*6,50N10中文資
100N75,100N75場(chǎng)效應(yīng)管,MOS管100N75參數(shù),100N75封裝DFN5*6100N75場(chǎng)效應(yīng)管,75A 100V,100N75參數(shù)資料,100N75引腳圖,100N75封裝為DFN5*6,100N
100N85,100N85場(chǎng)效應(yīng)管,MOS管100N85參數(shù),100N85封裝DFN5*6100N85場(chǎng)效應(yīng)管,100A 85V,100N85參數(shù)資料,100N85引腳圖,100N85封裝為DFN5*6,100N
100N06,100N06場(chǎng)效應(yīng)管,MOS管100N06參數(shù),100N06封裝DFN5*6100N06場(chǎng)效應(yīng)管,100A 65V,100N06參數(shù)資料,100N06引腳圖,100N06封裝為DFN5*6,100N
65N06,65N06場(chǎng)效應(yīng)管,MOS管65N06參數(shù),65N06封裝DFN5*665N06場(chǎng)效應(yīng)管,65A 60V,65N06參數(shù)資料,65N06引腳圖,65N06封裝為DFN5*6,65N06中文資料
50N06,50N06場(chǎng)效應(yīng)管,MOS管50N06參數(shù),50N06封裝DFN5*650N06場(chǎng)效應(yīng)管,50A 60V,50N06參數(shù)資料,50N06引腳圖,50N06封裝為DFN5*6,50N06中文資料
65N03,65N03場(chǎng)效應(yīng)管,MOS管65N03參數(shù),65N03封裝DFN5*665N03場(chǎng)效應(yīng)管,65A 30V,65N03參數(shù)資料,65N03引腳圖,65N03封裝為DFN5*6,65N03中文資料
110P03,110P03場(chǎng)效應(yīng)管,MOS管110P03參數(shù),110P03封裝DFN5*6110P03場(chǎng)效應(yīng)管,-110A -30V,110P03參數(shù)資料,110P03引腳圖,110P03封裝為DFN5*6,11